Research ArticleMATERIALS SCIENCE

Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

See allHide authors and affiliations

Science Advances  27 Jan 2017:
Vol. 3, no. 1, e1601935
DOI: 10.1126/sciadv.1601935

You are currently viewing the abstract.

View Full Text

Abstract

Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages.

Keywords
  • Lead Halide perovskites
  • thin film transistor
  • Ion migration
  • Band-transport

This is an open-access article distributed under the terms of the Creative Commons Attribution license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

View Full Text