Research ArticleAPPLIED SCIENCES AND ENGINEERING

Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

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Science Advances  24 Mar 2017:
Vol. 3, no. 3, e1602557
DOI: 10.1126/sciadv.1602557

Article Information

vol. 3 no. 3

Online ISSN: 
History: 
  • Received for publication October 18, 2016
  • Accepted for publication February 9, 2017

Author Information

  1. Hossain Mohammad Fahad1,2,3,*,
  2. Hiroshi Shiraki1,2,4,*,
  3. Matin Amani1,2,3,
  4. Chuchu Zhang1,
  5. Vivek Srinivas Hebbar1,
  6. Wei Gao1,2,3,
  7. Hiroki Ota1,2,3,
  8. Mark Hettick1,2,3,
  9. Daisuke Kiriya1,2,3,
  10. Yu-Ze Chen5,
  11. Yu-Lun Chueh5 and
  12. Ali Javey1,2,3,
  1. 1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.
  2. 2Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.
  3. 3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  4. 4Murata Manufacturing Co. Ltd., Nagaokakyo, Kyoto 617-8555, Japan.
  5. 5Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
  1. Corresponding author. Email: ajavey{at}eecs.berkeley.edu
    • * These authors contributed equally to this work.

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