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Atomically engineered electron spin lifetimes of 30 s in silicon

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Science Advances  31 Mar 2017:
Vol. 3, no. 3, e1602811
DOI: 10.1126/sciadv.1602811

Article Information

vol. 3 no. 3

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History: 
  • Received for publication November 13, 2016
  • Accepted for publication February 9, 2017

Author Information

  1. Thomas F. Watson1,*,,
  2. Bent Weber1,,
  3. Yu-Ling Hsueh2,
  4. Lloyd C. L. Hollenberg3,
  5. Rajib Rahman2 and
  6. Michelle Y. Simmons1,*
  1. 1Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
  2. 2School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
  3. 3Centre for Quantum Computation and Communication Technology, University of Melbourne, Melbourne, Victoria 3010, Australia.
  1. *Corresponding author. Email: tfwatson15{at}gmail.com (T.F.W.); michelle.simmons{at}unsw.edu.au (M.Y.S.)
  • Present address: QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands.

  • Present address: School of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia.

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