Research ArticleNANOMATERIALS

Selective control of electron and hole tunneling in 2D assembly

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Science Advances  19 Apr 2017:
Vol. 3, no. 4, e1602726
DOI: 10.1126/sciadv.1602726

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Abstract

Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, “carristor”) with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 106 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low–power consumption electronics.

Keywords
  • carristor
  • Two-dimensional materials
  • tungsten disulfide
  • graphene
  • hexagonal boron nitride
  • tunneling
  • surface potential

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