Surface transport and quantum Hall effect in ambipolar black phosphorus double quantum wells

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Science Advances  02 Jun 2017:
Vol. 3, no. 6, e1603179
DOI: 10.1126/sciadv.1603179

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Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional “which-layer” degree of freedom gives rise to celebrated phenomena, such as Coulomb drag, Hall drag, and exciton condensation. We demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to traditional QWs, each 2D layer is ambipolar and can be tuned into n-doped, p-doped, or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with an enhanced Landé g factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double, or wide QWs with unusual properties, such as high anisotropy.

  • Black Phosphorus
  • Quantum Wells
  • Surface Transport
  • Quantum Hall Effect

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