Research ArticleMATERIALS SCIENCE

Surface transport and quantum Hall effect in ambipolar black phosphorus double quantum wells

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Science Advances  02 Jun 2017:
Vol. 3, no. 6, e1603179
DOI: 10.1126/sciadv.1603179

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Abstract

Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional “which-layer” degree of freedom gives rise to celebrated phenomena, such as Coulomb drag, Hall drag, and exciton condensation. We demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to traditional QWs, each 2D layer is ambipolar and can be tuned into n-doped, p-doped, or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with an enhanced Landé g factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double, or wide QWs with unusual properties, such as high anisotropy.

Keywords
  • Black Phosphorus
  • Quantum Wells
  • Surface Transport
  • Quantum Hall Effect

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