Research ArticleChemistry

Fluorinated h-BN as a magnetic semiconductor

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Science Advances  14 Jul 2017:
Vol. 3, no. 7, e1700842
DOI: 10.1126/sciadv.1700842

Article Information

vol. 3 no. 7

Online ISSN: 
History: 
  • Received for publication March 19, 2017
  • Accepted for publication June 12, 2017

Author Information

  1. Sruthi Radhakrishnan1,
  2. Deya Das2,
  3. Atanu Samanta2,
  4. Carlos A. de los Reyes3,
  5. Liangzi Deng4,
  6. Lawrence B. Alemany5,3,
  7. Thomas K. Weldeghiorghis6,
  8. Valery N. Khabashesku1,7,
  9. Vidya Kochat1,
  10. Zehua Jin1,
  11. Parambath M. Sudeep1,8,
  12. Angel A. Martí1,3,
  13. Ching-Wu Chu4,
  14. Ajit Roy9,
  15. Chandra Sekhar Tiwary1,*,
  16. Abhishek K. Singh2,* and
  17. Pulickel M. Ajayan1,*
  1. 1Department of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA.
  2. 2Materials Research Centre, Indian Institute of Science, Bangalore 560012, India.
  3. 3Department of Chemistry, Rice University, Houston, TX 77005, USA.
  4. 4Texas Center for Superconductivity, University of Houston, Houston, TX 77004, USA.
  5. 5Shared Equipment Authority, Rice University, Houston, TX 77005, USA.
  6. 6Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803, USA.
  7. 7Baker Hughes Inc., Center for Technology Innovation, Houston, TX 77040, USA.
  8. 8Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, Ontario M5S3E3, Canada.
  9. 9Air Force Research Laboratories, 3005 Hobson Way, Wright-Patterson AFB, OH 45433, USA.
  1. *Corresponding author. Email: ajayan{at}rice.edu (P.M.A.); abhishek{at}mrc.iisc.ernet.in (A.K.S.); cst.iisc{at}gmail.com (C.S.T.)

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