Research ArticleNANOTECHNOLOGY

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides

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Science Advances  11 Aug 2017:
Vol. 3, no. 8, e1700481
DOI: 10.1126/sciadv.1700481

Article Information

vol. 3 no. 8

Online ISSN: 
History: 
  • Received for publication February 14, 2017
  • Accepted for publication July 12, 2017

Author Information

  1. Michal J. Mleczko1,
  2. Chaofan Zhang2,3,*,
  3. Hye Ryoung Lee1,4,
  4. Hsueh-Hui Kuo3,4,
  5. Blanka Magyari-Köpe1,
  6. Robert G. Moore3,
  7. Zhi-Xun Shen2,3,5,
  8. Ian R. Fisher3,5,
  9. Yoshio Nishi1,4 and
  10. Eric Pop1,4,6,
  1. 1Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
  2. 2Department of Physics, Stanford University, Stanford, CA 94305, USA.
  3. 3Stanford Institute for Materials and Energy Sciences, Stanford Linear Accelerator Center National Accelerator Laboratory, Menlo Park, CA 94025, USA.
  4. 4Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.
  5. 5Department of Applied Physics, Stanford University, Stanford, CA 94305, USA.
  6. 6Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA.
  1. Corresponding author. Email: epop{at}stanford.edu
  • * Present address: College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China.

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