High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes

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Science Advances  13 Apr 2018:
Vol. 4, no. 4, eaap9104
DOI: 10.1126/sciadv.aap9104

Article Information

vol. 4 no. 4

Online ISSN: 
  • Received for publication September 9, 2017
  • Accepted for publication February 23, 2018

Author Information

  1. Sung Min Kwon1,
  2. Jong Kook Won2,
  3. Jeong-Wan Jo1,
  4. Jaehyun Kim1,
  5. Hee-Joong Kim1,
  6. Hyuck-In Kwon1,
  7. Jaekyun Kim3,
  8. Sangdoo Ahn2,
  9. Yong-Hoon Kim4,
  10. Myoung-Jae Lee5,
  11. Hyung-ik Lee6,
  12. Tobin J. Marks7,*,
  13. Myung-Gil Kim2,* and
  14. Sung Kyu Park1,*
  1. 1School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea.
  2. 2Department of Chemistry, Chung-Ang University, Seoul 06974, Korea.
  3. 3Department of Photonics and Nanoelectronics, Hanyang University, Ansan, Korea.
  4. 4School of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Korea.
  5. 5Intelligent Devices and Systems Research Group, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Korea.
  6. 6Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon 443-803, Korea.
  7. 7Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL 60208, USA.
  1. *Corresponding author. Email: skpark{at} (S.K.P.); myunggil{at} (M.-G.K.); t-marks{at} (T.J.M.)


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