Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. Electronic band structure validation
  • section S2. Native oxide formation and passivation
  • section S3. Contact characterization
  • fig. S1. Undoped ARPES spectra of bulk crystals.
  • fig. S2. HSE06 DFT of monolayer and bulk band structure.
  • fig. S3. Gap divergence in hypothetical 2H-HfSe2.
  • fig. S4. ZrSe2 Raman laser oxidation.
  • fig. S5. Aging of capped ZrSe2.
  • fig. S6. MIS contact TEM.
  • fig. S7. Contact TLM analysis.
  • table S1. Laser oxidation peaks.
  • References (53–58)

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