Science Advances

Supplementary Materials

This PDF file includes:

  • Calculation of μFE and Vth
  • Optimized P3HT weight composition in P3HT-NF/PDMS composites
  • Calculation of temperature coefficient of resistance
  • Calculation of Hertzian contact pressure
  • Sign language translation program
  • fig. S1. Fabrication of AuNP-AgNW by using a galvanic replacement process.
  • fig. S2. Fabrication and deformed states of the elastomeric composite semiconductor.
  • fig. S3. Percolation behavior of the P3HT-NF/PDMS composite semiconductor.
  • fig. S4. The composites with different weight compositions of P3HT and PDMS.
  • fig. S5. Lifetime of the elastomeric composite conductor and semiconductor.
  • fig. S6. Fabrication steps of the intrinsically stretchable TFTs and sensors.
  • fig. S7. Thickness of the rubbery TFT and P3HT-NF/PDMS semiconductor composite.
  • fig. S8. P3HT-NF/PDMS composite–based TFTs with different electrodes.
  • fig. S9. Performances of TFTs based on p-P3HT/PDMS and P3HT-NF/PDMS as semiconducting channels.
  • fig. S10. TFT performances with respect to mechanical strain.
  • fig. S11. Electrical resistance response of the strain sensor under a given hand gesture.
  • fig. S12. The sign language translation program.
  • References (46, 47)

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