Science Advances

This PDF file includes:

• fig. S1. Reference EELS spectra from pure WSe₂ and WS₂ monolayers.
  
• fig. S2. STEM-ADF of the entire 65-nm-long WS₂ quantum well and the corresponding strain distribution around the quantum well.
  
• fig. S3. Optical images and spectroscopy measurements of the WSe₂/WS₂ lateral heterostructure.
  
• fig. S4. Atomic model of WSe₂/WS₂ heterostructure.
  
• fig. S5. Additional structural characterization data from the lateral WSe₂/WS₂ heterointerface.
  
• fig. S6. Additional low-magnification STEM-ADF images showing the formation of arrays of WS₂ quantum wells at the WSe₂/WS₂ lateral interface, driven by dislocations.
  
• fig. S7. Comparison between dislocation climb and extension of a WS₂ edge during the sample growth.
  
• fig. S8. Atomic models for the SSe substitution barrier calculations.
  
• fig. S9. Band structure of lateral WSe₂/WS₂ superlattice.
  
• fig. S10. Optical images and spectroscopy measurements of the MoSe₂2/MoS₂ lateral heterostructure.
  
• fig. S11. Dislocation climb and formation of nanosize kinks during the growth of quantum well.

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Other Supplementary Material for this manuscript includes the following:

• movie S1 (.mp4 format). Scheme showing the dislocation climb and the corresponding quantum well growth process.