Science Advances

Supplementary Materials

This PDF file includes:

  • Supplementary Text
  • fig. S1. Atomic force microscopy images of SiO2 and Al2O3/SiO2.
  • fig. S2. Cross-sectional transmission electron microscopy image of Al2O3/MoS2/Al2O3 sandwiched structure.
  • fig. S3. Optical analysis of MoS2 film on Al2O3 layer.
  • fig. S4. Optical analysis of MoS2 film by Al2O3 layer encapsulation.
  • fig. S5. Optical analysis of MoS2 film sandwiched with Al2O3 layer.
  • fig. S6. Schematic band diagram of Au/MoS2 contacts with and without Al2O3 encapsulation.
  • fig. S7. Hysteresis of top-gated bilayer MoS2 TFTs on SiO2/Si substrate (green) and Al2O3/SiO2/Si substrate (blue).
  • fig. S8. Statistical data analysis of electrical properties of modified MoS2 TFT.
  • fig. S9. Electrical properties of single-crystal MoS2 TFTs.
  • fig. S10. Contact and channel sheet resistance analysis of top-gated MoS2 TFT.
  • fig. S11. The stability of Al2O3-encapsulated MoS2 TFTs for 1-month period.
  • fig. S12. Intrinsic OLED properties and structure information.
  • fig. S13. Analysis of current-voltage characteristics of AM-OLED pixel at different gate biases from 4 to 9 V.
  • fig. S14. Layout structure of designed active-matrix display.
  • fig. S15. Schematic illustration of steps for ultrathin AM-OLED display fabrication.
  • fig. S16. Normalized ON current values of unit pixel at the initial bending radius of 0.7 mm repeatedly.
  • table S1. The characteristics of MoS2-based TFTs with different device structures.
  • Legends for movies S1 and S2
  • Reference (36)

Download PDF

Other Supplementary Material for this manuscript includes the following:

  • movie S1 (.avi format). Active-matrix display operation on human wrist with external circuit.
  • movie S2 (.avi format). The dynamic operation of ultrathin display during peeling-off process.

Files in this Data Supplement: