Research ArticleNANOMATERIALS
Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy
- Xufan Li1,
- Ming-Wei Lin1,
- Junhao Lin2,3,*,
- Bing Huang4,5,
- Alexander A. Puretzky1,
- Cheng Ma1,
- Kai Wang1,
- Wu Zhou3,
- Sokrates T. Pantelides2,3,
- Miaofang Chi1,
- Ivan Kravchenko1,
- Jason Fowlkes1,
- Christopher M. Rouleau1,
- David B. Geohegan1 and
- Kai Xiao1,†
- 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
- 2Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA.
- 3Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
- 4Beijing Computational Science Research Center, Beijing 100094, China.
- 5Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112, USA.
- ↵†Corresponding author. E-mail: xiaok{at}ornl.gov
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Science Advances 15 Apr 2016:
Vol. 2, no. 4, e1501882
DOI: 10.1126/sciadv.1501882
