Research ArticleSEMICONDUCTORS

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

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Science Advances  22 Apr 2016:
Vol. 2, no. 4, e1600069
DOI: 10.1126/sciadv.1600069

Article Information

vol. 2 no. 4

Online ISSN: 
History: 
  • Received for publication January 15, 2016
  • Accepted for publication March 24, 2016
  • .

Author Information

  1. Yuanyue Liu1,*,,
  2. Paul Stradins1 and
  3. Su-Huai Wei1,2,*
  1. 1National Renewable Energy Laboratory, Golden, CO 80401, USA.
  2. 2Beijing Computational Science Research Center, Beijing 100094, China.
  1. *Corresponding author. E-mail: yuanyue.liu.microman{at}gmail.com (Y.L.); suhuaiwei{at}csrc.ac.cn (S.-H.W.)
    • Present address: California Institute of Technology, Pasadena, CA 91125, USA.

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