Research ArticleELECTROMAGNETISM
Interface-driven topological Hall effect in SrRuO3-SrIrO3 bilayer
- View ORCID ProfileJobu Matsuno1,*,
- Naoki Ogawa1,
- Kenji Yasuda2,
- View ORCID ProfileFumitaka Kagawa1,
- Wataru Koshibae1,
- Naoto Nagaosa1,2,
- Yoshinori Tokura1,2 and
- Masashi Kawasaki1,2
- 1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
- 2Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.
- ↵*Corresponding author. Email: matsuno{at}riken.jp
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Science Advances 08 Jul 2016:
Vol. 2, no. 7, e1600304
DOI: 10.1126/sciadv.1600304
Vol. 2, no. 7, e1600304
DOI: 10.1126/sciadv.1600304
Jobu Matsuno
1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
Naoki Ogawa
1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
Kenji Yasuda
2Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.
Fumitaka Kagawa
1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
Wataru Koshibae
1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
Naoto Nagaosa
1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
2Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.
Yoshinori Tokura
1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
2Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.
Masashi Kawasaki
1RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.
2Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.
