Article Information
vol. 3 no. 10
- Received for publication April 30, 2017
- Accepted for publication September 19, 2017
- .
Author Information
- Chenglong Hao1,2,
- Zhongquan Nie3,
- Huapeng Ye1,
- Hao Li2,
- Yang Luo1,
- Rui Feng1,
- Xia Yu2,
- Feng Wen1,4,
- Ying Zhang2,
- Changyuan Yu1,5,
- Jinghua Teng6,
- Boris Luk’yanchuk7,8,9 and
- Cheng-Wei Qiu1,10,*
- 1Department of Electrical and Computer Engineering, National University of Singapore,4 Engineering Drive 3, Singapore 117583, Singapore.
- 2Singapore Institute of Manufacturing Technology, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Kinesis, Singapore 138634, Singapore.
- 3Key Laboratory of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
- 4Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Institute of Wide Bandgap Semiconductors, Xi’an Jiaotong University, Xi’an 710049, China.
- 5Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong.
- 6Istitute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore.
- 7Data Storage Institute, A*STAR, Singapore 138634, Singapore.
- 8Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
- 9Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia.
- 10SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen 518060, People’s Republic of China.
- ↵*Corresponding author. Email: eleqc{at}nus.edu.sg