Research ArticleSURFACE CHEMISTRY

Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

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Science Advances  20 Oct 2017:
Vol. 3, no. 10, e1701661
DOI: 10.1126/sciadv.1701661

Article Information

vol. 3 no. 10

Online ISSN: 
History: 
  • Received for publication May 18, 2017
  • Accepted for publication September 20, 2017
  • .

Author Information

  1. Jun Hong Park1,2,3,
  2. Atresh Sanne4,
  3. Yuzheng Guo5,
  4. Matin Amani6,
  5. Kehao Zhang7,
  6. Hema C. P. Movva4,
  7. Joshua A. Robinson7,
  8. Ali Javey6,
  9. John Robertson8,
  10. Sanjay K. Banerjee4 and
  11. Andrew C. Kummel3,9,*
  1. 1Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul 03760, Republic of Korea.
  2. 2Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea.
  3. 3Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA 92093, USA.
  4. 4Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, USA.
  5. 5College of Engineering, Swansea University, Swansea, UK.
  6. 6Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720, USA.
  7. 7Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA.
  8. 8Department of Engineering, University of Cambridge, Cambridge CB2 1TN, UK.
  9. 9Departments of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA 92093, USA.
  1. *Corresponding author. Email: akummel{at}ucsd.edu

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