Research ArticleMATERIALS ENGINEERING
Atomically engineered electron spin lifetimes of 30 s in silicon
- Thomas F. Watson1,*,†,
- Bent Weber1,‡,
- Yu-Ling Hsueh2,
- Lloyd C. L. Hollenberg3,
- Rajib Rahman2 and
- Michelle Y. Simmons1,*
- 1Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
- 2School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
- 3Centre for Quantum Computation and Communication Technology, University of Melbourne, Melbourne, Victoria 3010, Australia.
- ↵*Corresponding author. Email: tfwatson15{at}gmail.com (T.F.W.); michelle.simmons{at}unsw.edu.au (M.Y.S.)
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Science Advances 31 Mar 2017:
Vol. 3, no. 3, e1602811
DOI: 10.1126/sciadv.1602811
Vol. 3, no. 3, e1602811
DOI: 10.1126/sciadv.1602811
Thomas F. Watson
Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
Bent Weber
Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
Yu-Ling Hsueh
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
Lloyd C. L. Hollenberg
Centre for Quantum Computation and Communication Technology, University of Melbourne, Melbourne, Victoria 3010, Australia.
Rajib Rahman
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
Michelle Y. Simmons
Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
