Research ArticleMATERIALS ENGINEERING
Atomically engineered electron spin lifetimes of 30 s in silicon
- Thomas F. Watson1,*,†,
- View ORCID ProfileBent Weber1,‡,
- Yu-Ling Hsueh2,
- Lloyd C. L. Hollenberg3,
- View ORCID ProfileRajib Rahman2 and
- Michelle Y. Simmons1,*
- 1Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
- 2School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
- 3Centre for Quantum Computation and Communication Technology, University of Melbourne, Melbourne, Victoria 3010, Australia.
- ↵*Corresponding author. Email: tfwatson15{at}gmail.com (T.F.W.); michelle.simmons{at}unsw.edu.au (M.Y.S.)
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Science Advances 31 Mar 2017:
Vol. 3, no. 3, e1602811
DOI: 10.1126/sciadv.1602811
Vol. 3, no. 3, e1602811
DOI: 10.1126/sciadv.1602811
Thomas F. Watson
1Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
Bent Weber
1Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
Yu-Ling Hsueh
2School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
Lloyd C. L. Hollenberg
3Centre for Quantum Computation and Communication Technology, University of Melbourne, Melbourne, Victoria 3010, Australia.
Rajib Rahman
2School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
Michelle Y. Simmons
1Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia.
