Fig. 2 Structural information. (A) Typical 2θ-θ scan of the heterostructure. (B) Φ scans at PZT{002}, SRO{002}, CFO{004}, and mica{202} diffraction peaks. a.u., arbitrary units. (C) The reciprocal space mapping of the heterostructure. r.l.u., relative light units. (D) The cross-sectional TEM image depicting the PZT/SRO and SRO/CFO/mica interfaces along with the selected area diffraction patterns of PZT, SRO, and mica.
Fig. 4 Ferroelectric properties. P-E (A) and C-E (B) hysteresis loops at various temperatures. (C) Remnant, saturation polarizations, and coercive field as functions of temperature. (D) PUND switching polarization as a function of pulse width at different voltages. The inset shows the measurement sequence. Retention (E) and fatigue (F) measurements at two typical temperatures.
Fig. 5 Flexibility and durability. P-E (A) and C-E (B) hysteresis loops under various tensile and compressive bending radii. (C) Psat, Pr, and Ec variation as a function of bending radius. (D) ΔP as a function of pulse width at 4 V under mechanical flexing. Polarization switching speed variation is shown in the inset. Retention (E) and fatigue (F) for the samples in unbent and compressively and tensilely bent for 1000 cycle conditions.
- Table 1 Flexible memory elements.
Summary of the flexible NVM elements. PZTx, PbZrxTi1−xO3; P(VDF-TrFE), poly[(vinylidenefluoride)-co-trifluoroethylene]; BTO, barium titanate; PET, polyethylene terephthalate; PI, polyimide; PEN, polyethylene naphthalate.
Ferroelectric material PZT20* PZT20* PZT52† PZT52 PZT53 PZT30 PZT52 PZT BTO P(VDF-TrFE) Flexible substrate Mica Si Ni superalloy
ribbonsSi Pt foil PI Cu foil Plastic PET Al foil Organic PEN PI Transfer required No Yes No No Yes No No Yes No Yes No No No Pr (μC/cm2) 60 75 40 18 25.5 15 20 ~20 — 11 7.4 8.52 — Ec (kV/cm) 100 400 91 60 54.9 ~500 ~25 1.1 V — 830 500 650 — Capacitance
(F/cm2)2.85 ~1.6 — 4 — — — 2.7 — — 0.062 — — Dielectric constant 460
@ 1 MHz— — 541
@ 1 kHz— 80
@ 1 kHz~1150 — 250
@ 0.1 MHz— — — — Switching time (ns) 2000 — — 500 — 165 — — — — — — — Fatigue (cycles) >1010
(unbent)
>1010 (bent)— — >109
(unbent)
>1010
(bent)107 15% loss
@ 1071010 — — — — — 102 Retention (years) >10
(unbent)
>10 (bent)— — >10 — 20% loss
@ 105 s— — — — — — >7000 s Cell size (mm2) 0.00785–
0.03140.0484 0.00785–
0.04710.01–
0.06250.008 0.03 — 0.01 16 0.025 0.03–
0.25— — Minimum bending
radius (mm)2.5 — — 5 — — — 8 — 6 — 7 0.5 Bending cycles @
radius>1000
@ 5 mm— — 1000
@ 5 mm— — — — — 500
@ 11 mm— — >1000
@ 4 mmReference This work (26) (16) (12, 13) (14) (18) (15) (17) (39) (19) (20) (21) (22) *Single-crystalline.
†Highly oriented.
Supplementary Materials
Supplementary material for this article is available at http://advances.sciencemag.org/cgi/content/full/3/6/e1700121/DC1
Supplementary Text
fig. S1. RHEED pattern.
fig. S2. Piezoresponse force microscopy.
fig. S3. Dielectric constant and capacitance at different temperatures.
fig. S4. Dielectric constant and capacitance under bending.
fig. S5. P-E hysteresis loops under tensile and compressive bending of 5 mm before and after 10 to 1000 bending cycles.
fig. S6. ΔP as a function of pulse width at various voltage pulses under compressive and tensile strains.
fig. S7. Raman spectra under bending.
References (40–43)
Additional Files
Supplementary Materials
This PDF file includes:
- Supplementary Text
- fig. S1. RHEED pattern.
- fig. S2. Piezoresponse force microscopy.
- fig. S3. Dielectric constant and capacitance at different temperatures.
- fig. S4. Dielectric constant and capacitance under bending.
- fig. S5. P-E hysteresis loops under tensile and compressive bending of 5 mm before and after 10
to 1000 bending cycles.
- fig. S6. ΔP as a function of pulse width at various voltage pulses under compressive and tensile
strains.
- fig. S7. Raman spectra under bending.
- References (40–43)
Files in this Data Supplement:
- Supplementary Text
