Research ArticleAPPLIED PHYSICS

Quantum interference mediated vertical molecular tunneling transistors

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Science Advances  12 Oct 2018:
Vol. 4, no. 10, eaat8237
DOI: 10.1126/sciadv.aat8237
  • Fig. 1 Schematic illustration of the vertical molecular tunneling transistor.

    (A) Schematic illustration of the overall device structure. (B) Chemical structure of the PCP and OPE3 molecules. (C) Schematic illustration of the molecular transistor with OPE3 SAMs and ionic liquid (DEME-TFSI) gating. DEME+ ions are the cations, and TFSI ions comprise the anions.

  • Fig. 2 Charge transport in molecular junctions.

    (A) Schematic illustration of the PCP and OPE3 junctions. (B) Transmission functions T(E) for PCP (red) and OPE3 (black). Insets show the junction structures for simulation. (C) Plots of experimental current density (JD) versus bias voltage (VD) for PCP and OPE3. (D) Experimental differential conductance (dJ/dV) versus VD plots for PCP and OPE3. (E) Theoretical current (ID) versus VD plots for PCP and OPE3. (F) Theoretical differential conductance (dI/dV) versus VD plots for PCP and OPE3.

  • Fig. 3 Charge transport in vertical molecular transistors.

    (A) Schematic illustration of the working device with EDLs. (B) Schematic band diagram of the device with changed VD at graphene electrode. (C) Schematic band diagram of the device with changed VG. (D and G) Transmission coefficient T(E) versus Embedded Image for PCP (D) and OPE3 (G) junctions for −0.4 < VD < 0.4 with steps of 0.2 V. (E and H) Gate-dependent theoretical ID-VD characteristics for PCP (E) and OPE3 (H). (F and I) Gate-dependent theoretical dI/dV-VD for PCP (F) and OPE3 (I). VG is varied from −0.6, −0.3, 0.0, 0.3, to 0.6 V in (E), (F), (H), and (I).

  • Fig. 4 Gating charge transport in experimental molecular transistors.

    (A and B) JD versus VD characteristics (A) and dJ/dV versus VD characteristics (B) for PCP with VG varying from −1 to 1 V with step of 0.5 V. (C) Two-dimensional visualization of dJ/dV plotted versus VG and VD for PCP. (D and E) JD-VD characteristics (D) and dJ/dV-VD characteristics (E) for OPE3 with gating from −1 to 1 V with step of 0.5 V. (F) Two-dimensional visualization of dJ/dV plotted versus VG and VD for OPE3. Insets in (A) and (D) show schematics of the PCP and OPE3 transistors with applied vertical electric field. Black lines in (C) and (F) are auxiliary markers of corresponding conductance diamond edge.

  • Fig. 5 Transfer characteristics for the vertical molecular transistors.

    (A) Experimental transfer characteristics for PCP. (B) Experimental transfer characteristics for OPE3. (C) Theoretical transfer characteristics for PCP. (D) Theoretical transfer characteristics for OPE3. VD is varied from −0.1, −0.2, −0.4, −0.6, to −0.8 V in (A) to (D).

Supplementary Materials

  • Supplementary material for this article is available at http://advances.sciencemag.org/cgi/content/full/4/10/eaat8237/DC1

    Section S1. Supplementary for device fabrication

    Section S2. Characterization of the devices

    Section S3. Supplementary for theoretical calculations

    Section S4. Supplementary charge transport in PCP and OPE3 devices

    Section S5. The performances for compared devices

    Fig. S1. Fabrication procedure for the vertical molecular transistor.

    Fig. S2. AFM and Raman characterizations.

    Fig. S3. HR-XPS characterizations.

    Fig. S4. Supplementary theoretical calculations.

    Fig. S5. Charge transport in PCP devices.

    Fig. S6. Charge transport in OPE3 devices.

    Fig. S7. Temperature-dependent performances for PCP and OPE3.

    Fig. S8. Supplementary gate performances for PCP and OPE3 transistors.

    Fig. S9. Gate performances for compared graphene and C18 devices.

    Table S1. Statistic conductance for PCP and OPE3 junctions.

    References (33, 34)

  • Supplementary Materials

    This PDF file includes:

    • Section S1. Supplementary for device fabrication
    • Section S2. Characterization of the devices
    • Section S3. Supplementary for theoretical calculations
    • Section S4. Supplementary charge transport in PCP and OPE3 devices
    • Section S5. The performances for compared devices
    • Fig. S1. Fabrication procedure for the vertical molecular transistor.
    • Fig. S2. AFM and Raman characterizations.
    • Fig. S3. HR-XPS characterizations.
    • Fig. S4. Supplementary theoretical calculations.
    • Fig. S5. Charge transport in PCP devices.
    • Fig. S6. Charge transport in OPE3 devices.
    • Fig. S7. Temperature-dependent performances for PCP and OPE3.
    • Fig. S8. Supplementary gate performances for PCP and OPE3 transistors.
    • Fig. S9. Gate performances for compared graphene and C18 devices.
    • Table S1. Statistic conductance for PCP and OPE3 junctions.
    • References (33, 34)

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