Research ArticleCONDENSED MATTER PHYSICS

Current-driven magnetization switching in ferromagnetic bulk Rashba semiconductor (Ge,Mn)Te

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Science Advances  07 Dec 2018:
Vol. 4, no. 12, eaat9989
DOI: 10.1126/sciadv.aat9989

Article Information

vol. 4 no. 12

Online ISSN: 
History: 
  • Received for publication April 26, 2018
  • Accepted for publication November 6, 2018
  • .

Author Information

  1. R. Yoshimi1,*,
  2. K. Yasuda2,
  3. A. Tsukazaki3,
  4. K. S. Takahashi1,4,
  5. M. Kawasaki1,2 and
  6. Y. Tokura1,2
  1. 1RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
  2. 2Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan.
  3. 3Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
  4. 4PRESTO, Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan.
  1. *Corresponding author. Email: ryutaro.yoshimi{at}riken.jp

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