Research ArticleAPPLIED SCIENCES AND ENGINEERING

Nanowire network–based multifunctional all-optical logic gates

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Science Advances  27 Jul 2018:
Vol. 4, no. 7, eaar7954
DOI: 10.1126/sciadv.aar7954
  • Fig. 1 Structural and optical properties of InP and AlGaAs crossbar NW networks.

    (A) False-color scanning electron microscopy image of the crossbar InP and AlGaAs NW networks (illustrated with different colors); InP NWs are combed along the vertical direction and an AlGaAs NW along the horizontal direction to form six pairs of crossbar junctions. (B) PL spectra of the NWs measured at a single exemplary measurement spot. The polarization direction of the excitation lasers (at 532 and 730 nm) is labeled. arb. units, arbitrary units. (C) HRSTEM image of InP NWs. The inset shows the diffraction pattern demonstrating the ZB crystal structure and the formation of frequent twin planes along the NW growth axis. (D) EDX measurement results of AlGaAas NWs show the Al and Ga composition along the NW growth direction (that is, [111] crystal direction). The line scan location is shown in the inset (28).

  • Fig. 2 NW-based all-optical n-bit full adder.

    (A) The optical image showing that, after a single combing, 10 AlGaAs and InP crossbar NW junctions exist in 30 μm × 30 μm area. The dashed white boxes highlight the locations where 10 parallel NAND and NOR logic gates can be constructed. (B) The truth tables of NOR and NAND logic gates using the polarization-dependent PL property of NWs. (C) The rules for obtaining the addition operation result from NAND and NOR logic gate outputs. (D) An example showing PL mapping of a single NW junction when the addition operation is performed [that is, 24 (110102) is added to 16 (011102)]. The addition operation result is obtained by following the rules shown in (C) (28).

  • Fig. 3 System-level demonstrated all-optical logic gate outputs.

    All-optical logic gate outputs of our proof-of-principle system-level demonstration under different input configurations for NAND (A) and NOR (B) logic operations.

Supplementary Materials

  • Supplementary material for this article is available at http://advances.sciencemag.org/cgi/content/full/4/7/eaar7954/DC1

    Section S1. NW growth

    Section S2. NW combing

    Section S3. TEM characterization

    Section S4. PL measurements

    Section S5. NW-based all-optical AND and OR gates

    Section S6. System-level demonstration of logic gate operations

    Section S7. NW-based multiplication operation

    Fig. S1. SEM characterization of NWs.

    Fig. S2. NW combing statistics.

    Fig. S3. TEM characterization of AlGaAs NWs.

    Fig. S4. Polarization dependent PL properties of NWs.

    Fig. S5. Truth tables of AND and OR logic gates using the polarization-dependent PL properties of crossbar NW networks.

    Fig. S6. Schematics of our system-level demonstration of the logic gates.

    Fig. S7. NW-based all-optical 2-bit multiplier.

  • Supplementary Materials

    This PDF file includes:

    • Section S1. NW growth
    • Section S2. NW combing
    • Section S3. TEM characterization
    • Section S4. PL measurements
    • Section S5. NW-based all-optical AND and OR gates
    • Section S6. System-level demonstration of logic gate operations
    • Section S7. NW-based multiplication operation
    • Fig. S1. SEM characterization of NWs.
    • Fig. S2. NW combing statistics.
    • Fig. S3. TEM characterization of AlGaAs NWs.
    • Fig. S4. Polarization dependent PL properties of NWs.
    • Fig. S5. Truth tables of AND and OR logic gates using the polarization-dependent PL properties of crossbar NW networks.
    • Fig. S6. Schematics of our system-level demonstration of the logic gates.
    • Fig. S7. NW-based all-optical 2-bit multiplier.

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