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Controlling three-dimensional optical fields via inverse Mie scattering

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Science Advances  04 Oct 2019:
Vol. 5, no. 10, eaax4769
DOI: 10.1126/sciadv.aax4769
  • Fig. 1 SEMs of the 1.55 μm device.

    (A) Schematic of the sphere layout. (B) SEM of the 1.55 μm device coated in gold showing the entire device from a top-down view, respectively. Zoomed-in SEMs showing the fabrication imperfections from an angled (C) and top-down (D) view of the spheres.

  • Fig. 2 Simulated and experimental device performance.

    (A to D and I to L) Simulated intensity profiles produced at specific distances from the device surface showing the focal spot rotating in the x-y plane. (E to H and M to P) Experimentally acquired intensity profiles at specific distances from the device surface. Experimental images share the same linear intensity scale, and simulated images share the same linear intensity scale. All solid white scale bars are 10 μm, and the window size is 80 μm by 80 μm.

  • Fig. 3 Focal spot location and error.

    (A) Comparison of the simulated focal spot positions and the experimental positions based on the location of maximum intensity. Simulated (experimental) data are plotted in red (blue). The dashed black line is a circle of radius 12 μm serving as an eye guide. (B) Relative positional error of each of the focal spots. Numbers correspond to the order in which spots appear, with 1 being the closest focal plane (100 μm) and 8 being the furthest (300 μm).

Supplementary Materials

  • Supplementary material for this article is available at http://advances.sciencemag.org/cgi/content/full/5/10/eaax4769/DC1

    Section S1. The GMMT and specification of FOM

    Section S2. Derivation of the derivative

    Section S3. Optimization parameters

    Section S4. Mie coefficients

    Section S5. Effect of fabrication defects

    Section S6. The 3 μm experimental and simulation data

    Section S7. Computing resources

    Fig. S1. Optimization scheme.

    Fig. S2. Mie coefficients.

    Fig. S3. SEM of the initial device.

    Fig. S4. Simulated and experimental device performance.

    Fig. S5. Extracted focal spots and locations.

    Fig. S6. In-plane focal spot comparison.

    Fig. S7. The 3 μm simulated and experimental device performance.

    Fig. S8. The 3 μm device SEM.

    Table S1. Benefits and drawbacks of the design approach.

    Table S2. Optimization parameters.

    References (41, 42)

  • Supplementary Materials

    This PDF file includes:

    • Section S1. The GMMT and specification of FOM
    • Section S2. Derivation of the derivative
    • Section S3. Optimization parameters
    • Section S4. Mie coefficients
    • Section S5. Effect of fabrication defects
    • Section S6. The 3 μm experimental and simulation data
    • Section S7. Computing resources
    • Fig. S1. Optimization scheme.
    • Fig. S2. Mie coefficients.
    • Fig. S3. SEM of the initial device.
    • Fig. S4. Simulated and experimental device performance.
    • Fig. S5. Extracted focal spots and locations.
    • Fig. S6. In-plane focal spot comparison.
    • Fig. S7. The 3 μm simulated and experimental device performance.
    • Fig. S8. The 3 μm device SEM.
    • Table S1. Benefits and drawbacks of the design approach.
    • Table S2. Optimization parameters.
    • References (41, 42)

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