Research ArticleAPPLIED SCIENCES AND ENGINEERING

Tuning the deformation mechanisms of boron carbide via silicon doping

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Science Advances  25 Oct 2019:
Vol. 5, no. 10, eaay0352
DOI: 10.1126/sciadv.aay0352
  • Fig. 1 Structure characteristics of the arc-melted sample after diffusion.

    (A) Schematic of the arc-melted sample after diffusion has taken place. (B) Raman spectra for undoped boron carbide and Si-doped boron carbide. a.u., arbitrary units. (C) A possible atomic model of the Si-doped boron carbide. Some of the CBC chains are replaced by kinked CSiC chains. [The model is adopted from (16).]

  • Fig. 2 Comparison of the Raman spectra of indented undoped and Si-doped boron carbides underneath the Vickers indents.

    Raman spectra of indented (A) undoped boron carbide and (B) Si-doped boron carbide compared to their pristine counterparts. Raman mapping of the amorphous phase in Vickers hardness impressions in (C) undoped boron carbide and within the diffusion zone and (D) in Si-doped single-crystal boron carbide.

  • Fig. 3 Bright-field TEM images of indented undoped and Si-doped boron carbides.

    Low-magnification TEM images of indented (A) undoped and (B) Si-doped boron carbides, with higher-magnification images showing shear faults in (C) and (D), respectively. The shear faults (consisting of amorphous bands and microcracks) are indicated by the arrows.

  • Fig. 4 Microstructure of the quasi-plastic zones revealed by PED with a step size of 5 nm.

    (A) Orientation map overlapped with reliability map and (B) correlation coefficient map of undoped boron carbide. (C) Orientation map overlapped with reliability map and (D) correlation coefficient map of Si-doped boron carbide. (E) Orientation and reliability map containing part of the quasi-plastic zone of a Si-doped boron carbide sample. The corresponding diffraction patterns from the regions (F) outside and (G) inside the quasi-plastic zone, as labeled in (E). The orientation maps are viewed along the out-of-plane direction. (Note that the intensity of diffuse ring from the narrow amorphous shear bands is overpowered by the diffraction spots from the crystalline phase. The amorphous nature of the shear bands is best revealed by high-resolution TEM rather than PED.)

Supplementary Materials

  • Supplementary material for this article is available at http://advances.sciencemag.org/cgi/content/full/5/10/eaay0352/DC1

    Fig. S1. Preparation of the diffusion couple.

    Fig. S2. Berkovich nanoindentation was performed across the Si diffusion zone and the undoped boron carbide within one boron carbide grain.

    Fig. S3. Berkovich nanoindentation results for undoped and Si-doped boron carbides.

    Fig. S4. TEM observation of indented undoped and Si-doped boron carbides.

    Fig. S5. Orientation maps of the quasi-plastic zones of undoped and Si-doped boron carbides.

  • Supplementary Materials

    This PDF file includes:

    • Fig. S1. Preparation of the diffusion couple.
    • Fig. S2. Berkovich nanoindentation was performed across the Si diffusion zone and the undoped boron carbide within one boron carbide grain.
    • Fig. S3. Berkovich nanoindentation results for undoped and Si-doped boron carbides.
    • Fig. S4. TEM observation of indented undoped and Si-doped boron carbides.
    • Fig. S5. Orientation maps of the quasi-plastic zones of undoped and Si-doped boron carbides.

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