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Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin

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Science Advances  20 Dec 2019:
Vol. 5, no. 12, eaax7407
DOI: 10.1126/sciadv.aax7407

Article Information

vol. 5 no. 12

Online ISSN: 
History: 
  • Received for publication April 18, 2019
  • Accepted for publication October 22, 2019
  • .

Author Information

  1. Wei-Ting Hsu1,
  2. Bo-Han Lin2,
  3. Li-Syuan Lu2,
  4. Ming-Hao Lee3,
  5. Ming-Wen Chu3,
  6. Lain-Jong Li4,5,
  7. Wang Yao6,*,
  8. Wen-Hao Chang2,7,* and
  9. Chih-Kang Shih1,*
  1. 1Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA.
  2. 2Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan.
  3. 3Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.
  4. 4Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia.
  5. 5School of Materials Science and Engineering, University of New South Wales, Sydney 2052, Australia.
  6. 6Department of Physics and Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China.
  7. 7Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hsinchu 30010, Taiwan.
  1. *Corresponding author. Email: shih{at}physics.utexas.edu (C.-K.S.); whchang{at}mail.nctu.edu.tw (W.-H.C.); wangyao{at}hku.hk (W.Y.)

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