Research ArticleCHEMICAL PHYSICS

Probing vacancy behavior across complex oxide heterointerfaces

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Science Advances  22 Feb 2019:
Vol. 5, no. 2, eaau8467
DOI: 10.1126/sciadv.aau8467

Article Information

vol. 5 no. 2

Online ISSN: 
History: 
  • Received for publication July 20, 2018
  • Accepted for publication January 11, 2019

Author Information

  1. Jiaxin Zhu1,
  2. Jung-Woo Lee2,
  3. Hyungwoo Lee2,
  4. Lin Xie3,
  5. Xiaoqing Pan3,
  6. Roger A. De Souza4,
  7. Chang-Beom Eom2 and
  8. Stephen S. Nonnenmann1,*
  1. 1Department of Mechanical and Industrial Engineering, University of Massachusetts-Amherst, Amherst, MA 01003, USA.
  2. 2Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
  3. 3Department of Chemical Engineering and Materials Science, University of California, Irvine, Irvine, CA 92697, USA.
  4. 4Institute of Physical Chemistry, RWTH Aachen University, Aachen 52056, Germany.
  1. *Corresponding author. Email: ssn{at}umass.edu

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