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High-speed black phosphorus field-effect transistors approaching ballistic limit

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Science Advances  21 Jun 2019:
Vol. 5, no. 6, eaau3194
DOI: 10.1126/sciadv.aau3194

Article Information

vol. 5 no. 6

Online ISSN: 
History: 
  • Received for publication August 13, 2018
  • Accepted for publication May 15, 2019
  • .

Author Information

  1. Xuefei Li1,*,
  2. Zhuoqing Yu2,*,
  3. Xiong Xiong1,
  4. Tiaoyang Li1,
  5. Tingting Gao1,
  6. Runsheng Wang2,
  7. Ru Huang2 and
  8. Yanqing Wu1,2,
  1. 1Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  2. 2Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing 100871, China.
  1. Corresponding author. Email: yqwu{at}pku.edu.cn
  • * These authors contributed equally to this work.

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