Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures

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Science Advances  05 Jul 2019:
Vol. 5, no. 7, eaaw0409
DOI: 10.1126/sciadv.aaw0409

Article Information

vol. 5 no. 7

Online ISSN: 
  • Received for publication November 13, 2018
  • Accepted for publication May 29, 2019
  • .

Author Information

  1. Sultan Albarakati1,*,
  2. Cheng Tan1,*,
  3. Zhong-Jia Chen2,*,
  4. James G. Partridge1,
  5. Guolin Zheng1,
  6. Lawrence Farrar1,
  7. Edwin L. H. Mayes1,
  8. Matthew R. Field1,
  9. Changgu Lee3,
  10. Yihao Wang4,
  11. Yiming Xiong4,
  12. Mingliang Tian4,
  13. Feixiang Xiang5,
  14. Alex R. Hamilton5,
  15. Oleg A. Tretiakov5,6,
  16. Dimitrie Culcer5,,
  17. Yu-Jun Zhao2, and
  18. Lan Wang1,
  1. 1School of Science, RMIT University, Melbourne, VIC 3000, Australia.
  2. 2Department of Physics, South China University of Technology, Guangzhou, Guangdong 510640, China.
  3. 3Center for Quantum Materials and Superconductivity (CQMS) and Department of Physics, Sungkyunkwan University, Suwon, Republic of Korea.
  4. 4Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, Anhui 230031, China.
  5. 5School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, NSW 2052, Australia.
  6. 6National University of Science and Technology “MISiS,” Moscow 119049, Russia.
  1. Corresponding author. Email:{at} (L.W.); zhaoyj{at} (Y.-J.Z.); d.culcer{at} (D.C.)
  • * These authors contributed equally to this work.


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