Research ArticleAPPLIED SCIENCES AND ENGINEERING

Breath figure–derived porous semiconducting films for organic electronics

See allHide authors and affiliations

Science Advances  25 Mar 2020:
Vol. 6, no. 13, eaaz1042
DOI: 10.1126/sciadv.aaz1042
  • Fig. 1 Chemical structures and fabrication process for devices with porous polymeric semiconducting films.

    (A) Chemical structures of materials used in this study. (B) Schematic illustration of the porous OTFT structure and the breath figure fabrication process.

  • Fig. 2 Morphologies, structures, and electrical performance of transistors fabricated from porous polymeric semiconducting P3HT/PS films.

    AFM images and the cross-sectional analyses of (A) dense and (B) porous P3HT/PS films. (C) Out-of-plane and (D) in-plane GIWAXS line cuts of the indicated P3HT/PS thin films. Representative transfer plots of (E) dense and (F) porous P3HT/PS OTFTs.

  • Fig. 3 Gas sensor properties of the indicated porous P3HT/PS transistors.

    (A) OTFT transfer plots. Percentage change of threshold voltage VT (B) and mobility (C) as a function of the NO2 vapor concentration exposures of P3HT/PS OTFT sensors. (D) Responsivity (R)–VG plots of the indicated devices to NO2 vapor. (E) Real-time responsivity (VD = VG = −60 V) to dynamic NO2 concentrations. (F) Selectivity of the P3HT/PS OTFT sensors to H2 and CO2 at 103-ppm concentration and CO, SO2, NH3, and NO2 vapors at 20-ppm concentration.

  • Fig. 4 Morphologies, structures, and gas sensor performance of the indicated porous transistors.

    AFM images of (A) dense and (B) porous C8BTBT/PS films. The σRMS values of the dense and porous C8BTBT/PS films are 7.6 and 15.2 nm, respectively. AFM images of (C) dense and (D) porous N2200/PS thin films. The σRMS values of the dense and porous C8BTBT/PS films are 3.9 and 10.2 nm, respectively. 2D grazing incidence x-ray diffraction spectrum of (E) dense and (F) porous C8BTBT/PS films. (G) Sensitivity of the OTFTs based on the indicated films to different NH3 concentrations.

  • Fig. 5 Schematic of the device structures and electrical properties of porous electrochemical transistors.

    (A) Schematic device structure for an OECT. (B) Transfer curves for both dense and porous P3HT/PS films. (C) Transient behavior of OECTs with dense and porous P3HT/PS films. (D) Schematic diethylenetriamine (DETA) doping of N2200/PS resistive devices. (E) Electrical conductivity of dense and porous N2200/PS films as a function of doping time. (F) Absolute I-V curves of dense and porous N2200/PS films after 20 min of doping.

  • Table 1 Electrical parameters of dense and porous P3HT/PS OTFTs exposed to the indicated NO2 concentrations.

    NO2 concentration
    (ppm)
    Dense OTFTsPorous OTFTs
    Ion (×10−7A)VT (V)μ (×10−3 cm2 V−1 s−1)Ion (×10−7A)VT (V)μ (×10−3 cm2 V−1 s−1)
    01.824.31.01.153.21.5
    11.844.71.11.344.81.6
    21.865.31.21.416.42.0
    51.886.71.41.5211.23.1
    101.9410.71.61.6120.14.7
    152.0519.62.01.7832.29.3
    202.1930.14.32.3052.130.5

Supplementary Materials

  • Supplementary material for this article is available at http://advances.sciencemag.org/cgi/content/full/6/13/eaaz1042/DC1

    Fig. S1. AFM images of porous semiconducting polymer films and 2D GIWAXS characterization.

    Fig. S2. Output curves and sensor performance of P3HT/PS polymer transistors.

    Fig. S3. Device stability of porous P3HT/PS polymer transistors.

    Fig. S4. Structural characterization and electrical performance of indicated films and their transistors.

    Fig. S5. Gas sensor performance of C8BTBT/PS organic transistors.

    Fig. S6. Gas sensor and electrical performance of N2200/PS polymer transistors.

    Fig. S7. Electrical performance and transient behaviors of P3HT/PS OECTs with tungsten gate electrodes.

    Fig. S8. Electrical performance and transient behaviors of P3HT/PS OECTs with Ag/AgCl gate electrodes.

    Table S1. Electrical parameters of dense and porous C8BTBT/PS OTFTs exposed to the indicated NH3 concentrations.

    Table S2. Comparison of the μC* value of our work and the references.

  • Supplementary Materials

    This PDF file includes:

    • Fig. S1. AFM images of porous semiconducting polymer films and 2D GIWAXS characterization.
    • Fig. S2. Output curves and sensor performance of P3HT/PS polymer transistors.
    • Fig. S3. Device stability of porous P3HT/PS polymer transistors.
    • Fig. S4. Structural characterization and electrical performance of indicated films and their transistors.
    • Fig. S5. Gas sensor performance of C8BTBT/PS organic transistors.
    • Fig. S6. Gas sensor and electrical performance of N2200/PS polymer transistors.
    • Fig. S7. Electrical performance and transient behaviors of P3HT/PS OECTs with tungsten gate electrodes.
    • Fig. S8. Electrical performance and transient behaviors of P3HT/PS OECTs with Ag/AgCl gate electrodes.
    • Table S1. Electrical parameters of dense and porous C8BTBT/PS OTFTs exposed to the indicated NH3 concentrations.
    • Table S2. Comparison of the μC* value of our work and the references.

    Download PDF

    Files in this Data Supplement:

Stay Connected to Science Advances

Navigate This Article