A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

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Science Advances  10 Apr 2020:
Vol. 6, no. 15, eaaz4948
DOI: 10.1126/sciadv.aaz4948

Article Information

vol. 6 no. 15

Online ISSN: 
  • Received for publication September 14, 2019
  • Accepted for publication January 13, 2020
  • .

Author Information

  1. Satyaprasad P. Senanayak1,2,
  2. Mojtaba Abdi-Jalebi1,3,
  3. Varun S. Kamboj1,
  4. Remington Carey1,
  5. Ravichandran Shivanna1,
  6. Tian Tian4,5,
  7. Guillaume Schweicher1,
  8. Junzhan Wang1,
  9. Nadja Giesbrecht6,
  10. Daniele Di Nuzzo1,
  11. Harvey E. Beere1,
  12. Pablo Docampo6,7,
  13. David A. Ritchie1,8,
  14. David Fairen-Jimenez4,
  15. Richard H. Friend1 and
  16. Henning Sirringhaus1,*
  1. 1Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.
  2. 2CSIR- Institute of Minerals and Materials Technology Council of Scientific & Industrial Research, Bhubaneswar–751 013, Odisha, India.
  3. 3Institute for Materials Discovery, University College London, Torrington Place, London WC1E 7JE, UK.
  4. 4Adsorption and Advanced Materials (AAM) Laboratory, Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, UK.
  5. 5Department of Chemical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ, UK.
  6. 6Department Chemie, Ludwig-Maximilians-Universität-München, Butenandtstr, München, Germany.
  7. 7School of Mathematics, Statistics and Physics, Newcastle University, Herschel Building, Newcastle upon Tyne NE1 7RU, UK.
  8. 8Department of Physics, Swansea University, Sketty, Swansea SA2 8PQ, UK.
  1. *Corresponding author. Email: hs220{at}


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