On-demand spin-state manipulation of single-photon emission from quantum dot integrated with metasurface

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Science Advances  29 Jul 2020:
Vol. 6, no. 31, eaba8761
DOI: 10.1126/sciadv.aba8761
  • Fig. 1 Design of metasurface for on-demand spin-state control of single-photon emission.

    (A) Illustration of the designed structure for manipulating QD emission. The structure consists of three layers: a top metasurface layer, a middle dielectric layer with a QD embedded, and a bottom gold reflector layer. The metasurface is designed to convert the QD emissions from the two paths (labeled by 1 and 2) into two opposite circularly polarized beams that propagate along the directions with angles of θ1 and θ2 relative to the surface normal of metasurface, respectively. The inset shows the top view of a silicon nanoblock with a rotation angle of φ. (B) Side view of relative positions of QD and silicon nanoblock. r1 (r2) is the distance from the silicon nanoblock r(x, y) to the QD (mirror QD image), and γ12) is the angle between the direction r1 (r2) and z axis. h and l are the vertical distances from the QD to the metasurface and the gold mirror, respectively. (C) Schematic of the equivalent two-focus metalens of the metasurface. The LCP and RCP illuminated at incident angles of θ1 and θ2 can be focused into the same two foci.

  • Fig. 2 Simulated results of the far-field pattern of devices 1 and 2.

    (A and B) Calculated total and LCP and RCP intensities of the far-field scattering patterns for devices 1 (A) and 2 (B), respectively. The total intensity is the sum of LCP and RCP components. Note that the intensities of LCP and RCP in device 1 are multiplied by 2 to use the same color bar with the total far-field intensity. a.u., arbitrary units.

  • Fig. 3 Fabrication process of the integrated QD-SSBM device.

    (A) A wafer with an InAs QD embedded grown by molecular beam epitaxy. (B) Deposition of SiO2 dielectric layer and gold mirror. (C) Wafer bonding with fused glass with adhesive NOA61. (D) Removing of GaAs substrate and Al0.7Ga0.3As sacrificial layer by selective wet-etching process. (E) Fabrication of GaAs nanopillar with an InAs QD embedded. (F) Deposition of SiO2 and amorphous silicon layer. (G) Fabrication of SSBM structure on the silicon layer using electron beam lithography. (H) Optical image of the fabricated SSBM and the gold marks. (I) Scanning electron microscopy image of the fabricated SSBM.

  • Fig. 4 Measured far-field patterns of devices 1 and 2.

    (A) Measured Fourier image of the total far-field QD emission for device 1. (B) Measured Fourier image of the linear polarization (LP) and LCP and RCP far-field intensities of QD emission for device 2. The red solid lines are the Lorentz fitting of the line plot across the scattering peaks along the horizontal and vertical directions.

  • Fig. 5 Measured second-order correlation function g(2)(τ) of the QD emission after the fabrication of GaAs nanopillar and SSBM.

    The black open circles show the measured results. The red line is the fitting curve using the model in (40). This value of g(2)(0) is calculated from the integrated area in the zero-delay peak divided by the average area of other peaks away from zero delay. The uncertainty value is given by propagation of the SD in the peak fitting.

Supplementary Materials

  • Supplementary Materials

    On-demand spin-state manipulation of single-photon emission from quantum dot integrated with metasurface

    Yanjun Bao, Qiaoling Lin, Rongbin Su, Zhang-Kai Zhou, Jindong Song, Juntao Li, Xue-Hua Wang

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