Research ArticleAPPLIED SCIENCES AND ENGINEERING

Transiently chaotic simulated annealing based on intrinsic nonlinearity of memristors for efficient solution of optimization problems

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Science Advances  14 Aug 2020:
Vol. 6, no. 33, eaba9901
DOI: 10.1126/sciadv.aba9901

Article Information

vol. 6 no. 33

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History: 
  • Received for publication January 21, 2020
  • Accepted for publication July 1, 2020
  • .

Author Information

  1. Ke Yang1,
  2. Qingxi Duan1,
  3. Yanghao Wang1,
  4. Teng Zhang1,
  5. Yuchao Yang1,2,3,* and
  6. Ru Huang1,2,3,*
  1. 1Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China.
  2. 2Center for Brain Inspired Chips, Institute for Artificial Intelligence, Peking University, Beijing 100871, China.
  3. 3Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China.
  1. *Corresponding author. Email: yuchaoyang{at}pku.edu.cn (Y.Y.); ruhuang{at}pku.edu.cn (R.H.)

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