Research ArticleAPPLIED PHYSICS

Coherent Förster resonance energy transfer: A new paradigm for electrically driven quantum dot random lasers

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Science Advances  07 Oct 2020:
Vol. 6, no. 41, eaba1705
DOI: 10.1126/sciadv.aba1705
  • Fig. 1 Structure of the QD random laser device.

    (A) Schematic of the QD random laser device. (B) Side-view SEM image of the device structure showing each layer is well deposited. Scale bar, 200 nm. (C) Schematic illustration of CFRET. (D) SEM topography of the mixture QD film. Scale bar, 100 nm. The inset shows the real photo of the red-light emission from the QD random laser device.

  • Fig. 2 Energy band diagram and I-V characteristics of the QD random laser device.

    (A) Flat-band energy level diagram. (B) I-V characteristic of the QD random laser device. Positive bias is applied on the ITO side.

  • Fig. 3 Random laser emission characteristics.

    (A) Electroluminescence spectra of the laser device operated under different current injection. Lasing characteristics are observed at 40 mA. (B) Emission peak intensity and FWHM as a function of injection current. a.u., arbitrary unit.

  • Fig. 4 Angle-independent QD random laser characteristics.

    The EL lasing spectra are observed at an angle of 0°, +45°, and −45° in the plane normal to the film. CCD (charge-coupled device) detect the laser signal and transfer into electrical signal.

  • Fig. 5 Characteristics of mixture QD thin film.

    (A) Absorption and photoluminescence spectra of acceptor and emission spectrum of donor. (B) Time-resolved photoluminescence spectra of pristine and mixed QDs, monitored at 540 nm. (C) Time-resolved photoluminescence spectra of pristine and mixed QDs monitored at 630 nm. (D) Carrier lifetime as a function of pumping power density, monitored at 630 nm.

Supplementary Materials

  • Supplementary Materials

    Coherent Förster resonance energy transfer: A new paradigm for electrically driven quantum dot random lasers

    Tien-Lin Shen, Han-Wen Hu, Wei-Ju Lin, Yu-Ming Liao, Tzu-Pei Chen, Yu-Kuang Liao, Tai-Yuan Lin, Yang-Fang Chen

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