Research ArticlePHYSICS

Spontaneous phase segregation of Sr2NiO3 and SrNi2O3 during SrNiO3 heteroepitaxy

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Science Advances  05 Mar 2021:
Vol. 7, no. 10, eabe2866
DOI: 10.1126/sciadv.abe2866

Article Information

vol. 7 no. 10

PubMed: 
Online ISSN: 
History: 
  • Received for publication August 12, 2020
  • Accepted for publication January 21, 2021
  • .

Author Information

  1. Le Wang1,*,
  2. Zhenzhong Yang1,*,,
  3. Xinmao Yin2,*,
  4. Sandra D. Taylor1,
  5. Xu He3,
  6. Chi Sin Tang4,
  7. Mark E. Bowden5,
  8. Jiali Zhao6,
  9. Jiaou Wang6,
  10. Jishan Liu1,7,
  11. Daniel E. Perea8,
  12. Linda Wangoh1,
  13. Andrew T. S. Wee2,
  14. Hua Zhou9,
  15. Scott A. Chambers1, and
  16. Yingge Du1,
  1. 1Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99354, USA.
  2. 2Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
  3. 3Catalan Institute of Nanoscience and Nanotechnology-ICN2, CSIC and BIST, Campus UAB, 08193 Bellaterra, Spain.
  4. 4NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456, Singapore.
  5. 5Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99354, USA.
  6. 6Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China.
  7. 7State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (CAS) , Shanghai 200050, China.
  8. 8Earth and Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99354, USA.
  9. 9X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA.
  1. Corresponding author. Email: sa.chambers{at}pnnl.gov (S.A.C.); yingge.du{at}pnnl.gov (Y.D.)
  • * These authors contributed equally to this work.

  • Present address: Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, China

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