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Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire

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Science Advances  08 Jan 2021:
Vol. 7, no. 2, eabd5891
DOI: 10.1126/sciadv.abd5891

Article Information

vol. 7 no. 2

PubMed: 
Online ISSN: 
History: 
  • Received for publication June 30, 2020
  • Accepted for publication November 16, 2020
  • .

Author Information

  1. Riena Jinno1,*,,
  2. Celesta S. Chang2,3,*,
  3. Takeyoshi Onuma4,
  4. Yongjin Cho1,
  5. Shao-Ting Ho5,
  6. Derek Rowe1,
  7. Michael C. Cao3,
  8. Kevin Lee1,
  9. Vladimir Protasenko1,
  10. Darrell G. Schlom5,6,
  11. David A. Muller3,6,
  12. Huili G. Xing1,5 and
  13. Debdeep Jena1,5,
  1. 1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
  2. 2Department of Physics, Cornell University, Ithaca, NY 14853, USA.
  3. 3School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
  4. 4Department of Applied Physics, Kogakuin University, 2665-1 Hachioji, Tokyo 192-0015, Japan.
  5. 5Department of Material Science and Engineering, Cornell University, Ithaca, NY 14853, USA.
  6. 6Kavli Institute for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA.
  1. Corresponding author. Email: djena{at}cornell.edu
  • * These authors contributed equally to this work.

  • Present address: Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan.

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