Science Advances

Supplementary Materials

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  • fig. S1. Transfer and output characteristics of FETs with DPPTTT and the DPPTTT-NMe4I thin film at a molar ratio of 30:1 by using CYTOP-modified dielectric layers.
  • fig. S2. Extraction of hole mobilities from the transfer characteristics of DPPTTT and DPPTTT-NMe4I thin film at a molar ratio of 30:1.
  • fig. S3. Variation of hole mobility for FETs with DPPTTT-NMe4I thin film at a molar ratio of 30:1 before and after thermal annealing at 80°, 100°, and 120°C.
  • fig. S4. Transfer characteristics of FETs with DPPTTT-NMe4I thin films at different molar ratios.
  • fig. S5. Transfer and output characteristics of FETs with DPPTTT-NMe4Br thin films at a molar ratio of 30:1.
  • fig. S6. Transfer characteristics of FETs with DPPTTT thin films without NMe4I after addition of DMSO to the polymer solutions.
  • fig. S7. The initial output/transfer curves for DPPTTT and DPPTTT-NMe4I (30:1) thin film and those after the third, fifth, seventh, and tenth forward voltage sweeps (1st, black; 3rd, blue; 5th, red; 7th, yellow; 10th, cyan).
  • fig. S8. The transfer and output curves of FETs with DPPTTT-NMe4I thin films at a molar ratio of 30:1 measured with forward (black) and reverse (blue) voltage sweeps (VGS from 5 to −40 and to 5 V; VDS from 0 to −60 and to 0 V).
  • fig. S9. ESR spectra of DPPTTT and DPPTTT-NMe4I.
  • fig. S10. Absorption, IR, and Raman spectra of thin films of DPPTTT and DPPTTT-NMe4I at molar ratios of 15:1 and 30:1.
  • fig. S11. The SKPM potential profiles of DPPTTT and DPPTTT-NMe4I thin films at a molar ratio of 30:1 under different gate voltages.
  • fig. S12. The dependence of the ratio of corrected mobility to uncorrected mobility of DPPTTT thin film on the gate voltage.
  • fig. S13. Transfer characteristics of FETs with other conjugated D-A polymers after incorporation of NMe4I.
  • fig. S14. X-ray photoelectron spectra of thin films of DPPTTT and DPPTTT-NMe4I at a molar ratio of 15:1.
  • fig. S15. The plot of the capacitances at different frequencies (1 to 2000 Hz) for the dielectric layers measured with the configuration Au/NMe4I/OTS-modified SiO2/Si.
  • fig. S16. Hysteresis in transfer characteristics of FETs with DPPTTT using the NMe4I-OTS-SiO2 as the dielectric layer.
  • table S1. The hole mobilities (μ) extracted by the two-point method with VTh and different values of VGS for as-prepared BGBC FETs with DPPTTT neat film and DPPTTT-NMe4I at a molar ratio of 30:1.
  • table S2. Relaxation times of carbon atoms of the side alkyl chains of DPPTTT in the absence and presence of NMe4I on the basis of solid state of 13C NMR.
  • table S3. The mobilities (μ), threshold voltages (VTh), on/off ratios (Ion/Ioff), Ioff, and subthreshold slop (S) for as-prepared BGBC FETs with neat thin films of PDPP4T, PBDTTT-C-T, P3HT, and P3EHT and the respective thin films after incorporation of NMe4I at a molar ratio of 30:1.

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