Science Advances

Supplementary Materials

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  • Supplementary Text
  • fig. S1. Full sweep transfer characteristics.
  • fig. S2. Lead resistance subtraction.
  • fig. S3. Optical spectroscopy evidence of high semiconducting purity.
  • fig. S4. Effect of annealing on Ion/Ioff.
  • fig. S5. Ioff variability.
  • fig. S6. Postdeposition treatment effect on output characteristics.
  • fig. S7. Optical absorbance spectra used to verify XPS atomic concentrations and CNT diameter distribution.
  • fig. S8. Atomic force microscopy height measurement used to quantify packing density for XPS calibration.
  • fig. S9. Temperature-dependent FTIR measurement of PFO-BPy side chains and backbone.
  • fig. S10. On-conductance comparison of “annealed” versus “rinsed + annealed” treatments.
  • fig. S11. Conductance per tube measured for FETs with Lch < 150 nm.
  • fig. S12. Contact resistance and mean free path extraction.
  • table S1. Surface treatment XPS summary.
  • table S2. CNT FET performance comparisons.
  • References (6474)

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