Science Advances

Supplementary Materials

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  • Supplementary Materials and Methods
  • fig. S1. Thickness dependence of the effective SHA, θeff SH, for Ir1−xMnx.
  • fig. S2. Frequency dependence of the effective SHA, θeff SH, for Ir1−xMnx.
  • fig. S3. Frequency dependence of θeff SH for (001) IrMn3 (top), (111) IrMn3 (middle), and p-IrMn3 (bottom).
  • fig. S4. ST-FMR signals measured on d IrMn3/60 Å Py at an RF frequency of 9 GHz.
  • fig. S5. XRD measured on Ir1−xMnx films with a thickness of 100 Å.
  • fig. S6. Magnetization Ms versus in-plane magnetic field obtained for Py on (001) IrMn3 (left), (111) IrMn3 (middle), and p-IrMn3 (right) measured from vibrating sample magnetometry.
  • fig. S7. Exchange bias field for IrMn3.
  • fig. S8. Exchange bias field measured in (001) and (111) IrMn3/60 Å Py bilayers as a function of IrMn3 thickness after the devices were annealed in-plane in a 1-T field (30 min) via magnetoresistance measurement.
  • fig. S9. θeff SH as a function of Cu and Au insertion layers for (001)- and (111)- oriented IrMn3/Py bilayers, respectively.
  • fig. S10. Ab initio band structure of IrMn3.
  • table S1. Summary of SHA, SHC, and resistivity of Ir1–xMnx–based ST-FMR devices in as-deposited, unannealed films.
  • table S2. AHC and SHC tensors.

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