Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. Fabrication of encapsulated WSe2 and additional ARPES data
  • section S2. Fabrication of and further ARPES from a MoSe2/WSe2 heterobilayer structure
  • section S3. Linear-scaling DFT calculations for twisted MoSe2/WSe2 heterobilayers
  • section S4. Band structure of twisted monolayer MoSe2/WSe2
  • section S5. ARPES of encapsulated MoSe2/WSe2 with heterotrilayer regions
  • section S6. Exciton energies at lower temperatures
  • section S7. DFT methodology
  • fig. S1. Fabrication of a graphene, WSe2, and graphite heterostructure.
  • fig. S2. Relative orientations of the graphene, WSe2, and graphite heterostructure.
  • fig. S3. Fabrication of a MoSe2/WSe2 heterostructure.
  • fig. S4. Relative orientations of the layers in an encapsulated MoSe2/WSe2 heterostructure.
  • fig. S5. Linear-scaling DFT predictions of the band structure of the twisted MoSe2/WSe2 interface.
  • fig. S6. Band structure of a twisted monolayer MoSe2/WSe2 heterostructure.
  • fig. S7. Comparison between bands and hybridization in aligned and twisted heterostructures.
  • fig. S8. Bands and hybridization in a MoSe2/WSe2 structure with heterotrilayer regions.
  • fig. S9. Lower-temperature interlayer exciton photoluminescence.
  • References (44–50)

Download PDF

Files in this Data Supplement: