Science Advances

Supplementary Materials

This PDF file includes:

  • S1. Sensor characteristics of an unfunctionalized CS-FET sensor
  • S2. Nanoparticle sensing layer sparsity analysis
  • S3. Effect of silicon channel thickness on CS-FET sensitivity
  • S4. CS-FET sensor response to temperature, relative humidity, and room temperature recovery characteristics
  • S5. Individual sensor cycling from low and high gas concentrations
  • S6. Fabrication process of chemical-sensitive 3.5-nm-thin silicon transistors
  • S7. Microheater characterization
  • S8. Transfer characteristics of H2S, H2, and NO2 CS-FETs
  • fig. S1. Properties of a control CS-FET without any sensing film.
  • fig. S2. Top-down TEM image of an ultrathin Pd0.3nmAu1nm on Si3N4 grids.
  • fig. S3. CS-FET sensor response dependence on silicon channel thickness.
  • fig. S4. Influence of ambient temperature and humidity on CS-FET sensor response.
  • fig. S5. High-low-high gas concentration cycling of CS-FET sensors.
  • fig. S6. CMOS-compatible fabrication process of CS-FETs.
  • fig. S7. Integrated microheater material selection and characterization.
  • fig. S8. Typical electrical transfer characteristics (ID-VBG) of functionalized CS-FETs.

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