Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. Power law fits of electron mobility
  • section S2. Geometric phase analysis
  • section S3. Core-level spectra
  • section S4. Tauc analysis of optical absorption spectra
  • section S5. Carrier depth profiling via C-V analysis
  • fig. S1. Log10-log10 plots of the field-effect electron mobility (μFE) as a function of gate voltage (VG) for single-layer In2O3 and In2O3/ZnO heterojunction transistors.
  • fig. S2. Composite diffractogram obtained by FFT of an HRTEM image of an In2O3/ZnO sample, along the growth direction of the heterojunction.
  • fig. S3. Electron microscopy analysis.
  • fig. S4. O-1s core-level spectra.
  • fig. S5. Depth profile of the In-3d core-level spectra.
  • fig. S6. Depth profile of the Zn-2p core-level spectra.
  • fig. S7. Variation of the spectral position of the In-3d peak versus the Zn composition, which is proportional to the ZnO thickness.
  • fig. S8. Variation of the spectral position of the Zn-2p peak versus the Zn composition, which is proportional to the ZnO thickness.
  • fig. S9. The XPS valence band spectra of thick and pure In2O3 (blue) and ZnO (black); the red dashed lines are used to determine the upper edge of the VB.
  • fig. S10. Optical absorption spectra.
  • fig. S11. Capacitance-voltage (C-V) measurements.
  • References (57, 58)

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