Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. Extraction of the electron temperature, gate lever arms, and addition energies of D1 and D2.
  • section S2. Fidelity of the sequential readout of D1 and D2.
  • section S3. Comparison of the spin relaxation times of previous donor devices.
  • fig. S1. Extraction of the electron temperature and gate lever arms from the thermal broadening of the SET Fermi level.
  • fig. S2. Extraction of the addition energy for the second and third electrons on D2.
  • fig. S3. Atomistic tight-binding calculations of the addition spectrum of 2P, 3P, and 4P donor dots.
  • fig. S4. Extraction of the spin-dependent tunnel times during readout of D1 and D2.
  • fig. S5. Optimization of the readout time.
  • fig. S6. Electrical readout fidelity of D1 and D2.
  • fig. S7. Deviation from the B5 field dependence in donor devices.
  • table S1. Comparison of lever arms (α), addition voltages (ΔVadd), and addition energies (Eadd) of D1 and D2 for each electron transition for two different cooldowns.
  • References (32–34)

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