Science Advances

Supplementary Materials

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  • Supplementary Materials
  • note S1. Fabrication and characterization of the laboratory-made GeOI wafer.
  • fig. S1. Fabrication process flow of 4-inch GeOI and its finished sample.
  • fig. S2. Characterization of laboratory-made GeOI.
  • fig. S3. The GeOI sample used for the van der Pauw measurement.
  • fig. S4. Thickness measurement of the corresponding ultrathin Ge membranes in Fig. 1B by AFM (XE-70 Park System).
  • fig. S5. Demonstration of the ultrathin Ge nanomembranes from laboratory-made GeOI to foreign substrate.
  • fig. S6. Titled scanning electron microscopy images of the ultrathin Ge membranes transferred onto foreign substrate.
  • fig. S7. Dark current measurements of different thicknesses of the Ge membrane sample.
  • fig. S8. The dark current and the photoresponse of the ultrathin GeOI sample.
  • fig. S9. VGS-IDS curve under the dark and different illumination conditions.
  • fig. S10. Simulated absorption spectra of ultrathin Ge nanomembranes on a 220-nm-thick Al2O3/Ag nanocavity substrate.
  • fig. S11. Optical microscopy images of the samples for multispectral response measurement.
  • table S1. Electronic properties of p-type GeOI sample.

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