Science Advances

Supplementary Materials

This PDF file includes:

  • text S1. Capacitance.
  • fig. S1. Particle characterization.
  • fig. S2. Monolayer preparation.
  • fig. S3. Hysteresis.
  • fig. S4. Capping.
  • fig. S5. Transport mechanism.
  • fig. S6. 2D plot of the device characteristics.
  • fig. S7. Voltage-dependent oscillations.
  • fig. S8. Position of minimum.
  • fig. S9. Influence of gate position.
  • References (41, 42)

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