Science Advances

Supplementary Materials

This PDF file includes:

  • fig. S1. Characterization of device 1 in the regime where νB > 0 and νT > 0 (which we call the nn′ regime).
  • fig. S2. Two-terminal conductance of device 1 in the pn regime (in which νB > 0 and νT < 0) at B = 4 T and large filling factors.
  • fig. S3. Analysis of transmission and reflection in Mach-Zehnder beamsplitters.
  • fig. S4. The effect of a dc bias on the differential conductance of a pn junction.
  • fig. S5. Analyzing the average conductance observed in npn measurements on device 2.
  • fig. S6. Analyzing the gate-length dependence of the Mach-Zehnder oscillation frequencies observed in npn devices.
  • fig. S7. Device 3: verifying the presence of broken symmetry quantum Hall states and measurements of edge channel equilibration as a function of magnetic field.
  • note S1. Modeling the distance between the edge channels forming an MZI.
  • note S2. Scattering model for an MZI at a graphene pn junction.
  • note S3. Conductance of two MZIs in series.
  • note S4. Analyzing the gate-length dependence of the Mach-Zehnder oscillation frequencies observed in the npn measurements on device 2.
  • note S5. Gate-defined equilibration studies.
  • note S6. Calculating charge densities and filling factors from gate voltages.
  • References (34, 35)

Download PDF

Files in this Data Supplement: