Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. Synthesis and material characterization
  • section S2. Device alignment and characterization
  • section S3. Detailed analysis of jV curves
  • section S4. jV curves on linear scale
  • section S5. Details of the two-site model
  • scheme S1. Synthetic method for the preparation of PBI-oVDF and Pc-oVDF.
  • scheme S2. Synthetic method for the preparation of SubPc-amide.
  • fig. S1. Structure of PBI-oVDF.
  • fig. S2. Characterization of PBI-oVDF.
  • fig. S3. Structure of Pc-oVDF.
  • fig. S4. Characterization of Pc-oVDF.
  • fig. S5. Structure of SubPc-amide.
  • fig. S6. NMR spectra of SubPc-amide.
  • fig. S7. Mass spectroscopy of SubPc-amide.
  • fig. S8. POM on SubPc.
  • fig. S9. Principle of the DWM.
  • fig. S10. Typical charging curves obtained by the DWM.
  • fig. S11. Analysis of a Pc-oVDF oFESC diode after incomplete field annealing.
  • fig. S12. Detailed analysis of current-voltage characteristics of oFESC diodes.
  • fig. S13. Hysteresis loop and current-voltage characteristics of PVDF-TrFE.
  • fig. S14. Same data as in Fig. 2B, plotted on linear scale.
  • fig. S15. Same data as in Fig. 3 (B and D), plotted on linear scale.
  • fig. S16. The potential landscape for hopping in the two-site model.
  • fig. S17. Geometry of the SubPc-amide molecule.
  • fig. S18. Experimental and simulated on/off ratio as a function of applied field.
  • table S1. Model parameters.
  • References (34–41)

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