Science Advances

Supplementary Materials

This PDF file includes:

  • Supplementary Materials and Methods
  • fig. S1. The SEM of as-grown MoS2 on HOPG via CVD showing two different areas.
  • fig. S2. STS of MoS2 ML taken far away from defects with fitting in a linear scale.
  • fig. S3. The large-area STM image of bare MoS2 grown by CVD on HOPG.
  • fig. S4. Raman spectra of a MoS2 ML before and after deposition of TiOPc under a 488-nm laser excitation.
  • fig. S5. The deposition of TiOPc molecules on MoS2 ML via molecular beam epitaxy at 300 K.
  • fig. S6. Reproduced subset of dI/dV/I/V near the TiOPc molecule on MoS2 ML.
  • fig. S7. Tip-induced diffusion of TiOPc molecule on MoS2.
  • fig. S8. STM image and STS recorded in bulk MoS2–deposited TiOPc molecules.
  • fig. S9. Full ML of TiOPc on bulk MoS2 and corresponding STS of a TiOPc ML.
  • fig. S10. Thermal stability of a TiOPc ML on an MoS2 ML.
  • fig. S11. DFT calculations of net charge in a TiOPc/MoS2 ML; three different locations in MoS2 ML are selected, as shown in the circles.
  • fig. S12. Back-gated leakage current of a single-layer MoS2 FET, with VD = 1 V before and after deposition of a TiOPc ML.
  • fig. S13. Back-gated transfer characteristics of a single-layer MoS2 FET, with VD = 0.1 V before and after deposition of a TiOPc ML.
  • table S1. Summary of relative net charge of TiOPc and MoS2 (neutral) from three different locations.
  • table S2. Net charge of TiOPc and MoS2 (−2e).
  • References (33, 42–60)

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