Science Advances

Supplementary Materials

This PDF file includes:

  • note S1. DALI.
  • note S2. Gap formation in a BO structure.
  • note S3. Single-particle LSPR sample fabrication.
  • note S4. Single-particle linear polarization LSPR measurement.
  • note S5. Additional single-particle linear polarization LSPR spectra.
  • note S6. UV-Vis measurement of CDL samples.
  • note S7. Numerical simulations.
  • fig. S1. Agarose gel electrophoresis of DNA origamis.
  • fig. S2. DNA origami deposition on the Si surface.
  • fig. S3. Schematic view of the reaction chamber setup for the SiO2 growth.
  • fig. S4. Fabrication of trenches/silhouettes with different DNA origami shapes.
  • fig. S5. Isotropic RIE etching of silicon.
  • fig. S6. PVD of gold.
  • fig. S7. HF liftoff (removal of the SiO2 mask).
  • fig. S8. AFM images with the corresponding thickness profiles and a SEM image of Au bowtie antennas on a sapphire substrate.
  • fig. S9. Schematic illustration of the oxide growth in the vicinity of the BO on a Si substrate.
  • fig. S10. Schematics of the SPS setup.
  • fig. S11. Single-structure spectra of different metallized origami shapes.
  • fig. S12. Normalized UV-Vis spectra of CDL samples with S-configuration and random orientation.
  • fig. S13. Simulation geometry for a CDL particle (S-shaped orientation) with a clockwise polarized incident light and used mesh.
  • fig. S14. Geometries of the different types of particles for the Comsol simulations.
  • fig. S15. Simulated LSPR spectra and field enhancements (E/E0 at resonance frequency) for the optimal bowtie structure and for the structures with geometries altered by the amount of the observed SDs.
  • table S1. Parameters for a-Si CVD.
  • table S2. Parameters for O2 plasma RIE.
  • table S3. Parameters for RIE SiO2 etching.
  • table S4. Parameters for RIE Si etching.
  • Appendix
  • Design and sequences of BO
  • Design and sequences of CDL
  • Additional SEM data set
  • Fabrication yield analysis
  • References (39–41)

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