Science Advances

Supplementary Materials

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  • fig. S1. RHEED patterns.
  • fig. S2. EELS spectrum image analysis for the 1-UC FeSe/SrTiO3 interface.
  • fig. S3. EELS spectra at three different spatial locations (first FeSe layer in proximity to STO, FeSe film 4 UC away from STO, and FeTe layer region for 8- and 14-UC FeSe/STO films).
  • fig. S4. Core-loss EELS mappings across the FeSe/STO interface of the 1- (S1), 8- (S3), and 14-UC (S4) films at room temperature.
  • fig. S5. Low-loss EELS mappings across the interface of the 1- (S1), 8- (S3), and 14-UC (S4) films.
  • fig. S6. FEFF simulation of the core-loss EELS spectra in the first UC FeSe layer near STO with and without tensile stress.
  • fig. S7. Evolution of Rxx versus T with gate voltage under different magnetic field for all seven samples S1, S2, S3, S4, S1′, S1″, and S1‴.
  • fig. S8. Hall transport results for all seven samples S1, S2, S3, S4, S1′, S1″, and S1‴.
  • fig. S9. Evolution of Ryx versus μ0H at various gate voltages at 40 and 50 K in sample S1.
  • fig. S10. The superconducting transition temperature Tc-mid as a function of the Hall coefficient RH measured at 40 K and 50 K.
  • fig. S11. Transport results of a 14-UC FeTe film on SrTiO3 substrate.
  • References (54–56)

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