Science Advances

Supplementary Materials

This PDF file includes:

  • fig. S1. Reference EELS spectra from pure WSe2 and WS2 monolayers.
  • fig. S2. STEM-ADF of the entire 65-nm-long WS2 quantum well and the corresponding strain distribution around the quantum well.
  • fig. S3. Optical images and spectroscopy measurements of the WSe2/WS2 lateral heterostructure.
  • fig. S4. Atomic model of WSe2/WS2 heterostructure.
  • fig. S5. Additional structural characterization data from the lateral WSe2/WS2 heterointerface.
  • fig. S6. Additional low-magnification STEM-ADF images showing the formation of arrays of WS2 quantum wells at the WSe2/WS2 lateral interface, driven by dislocations.
  • fig. S7. Comparison between dislocation climb and extension of a WS2 edge during the sample growth.
  • fig. S8. Atomic models for the SSe substitution barrier calculations.
  • fig. S9. Band structure of lateral WSe2/WS2 superlattice.
  • fig. S10. Optical images and spectroscopy measurements of the MoSe22/MoS2 lateral heterostructure.
  • fig. S11. Dislocation climb and formation of nanosize kinks during the growth of quantum well.

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Other Supplementary Material for this manuscript includes the following:

  • movie S1 (.mp4 format). Scheme showing the dislocation climb and the corresponding quantum well growth process.

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